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  • Artigo de periodico

    Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)

    Tito, M. A.; Pusep, Yuri A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

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      TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 15 maio 2024.

    • APA

      Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854

    • NLM

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4942854

    • Vancouver

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4942854

  • Artigo de periodico

    Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells (2016)

    Gozzi, G.; Cagnani, L. D.; Faria, Roberto Mendonça; Santos, L. F.

    Source: Journal of Solid State Electrochemistry. Unidade: IFSC

    Subjects: SEMICONDUTORES, PROPRIEDADES DOS MATERIAIS, EMISSÃO DA LUZ

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      GOZZI, G. et al. Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells. Journal of Solid State Electrochemistry, v. 20, n. 8, p. 2127-2133, 2016Tradução . . Disponível em: https://doi.org/10.1007/s10008-016-3219-2. Acesso em: 15 maio 2024.

    • APA

      Gozzi, G., Cagnani, L. D., Faria, R. M., & Santos, L. F. (2016). Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells. Journal of Solid State Electrochemistry, 20( 8), 2127-2133. doi:10.1007/s10008-016-3219-2

    • NLM

      Gozzi G, Cagnani LD, Faria RM, Santos LF. Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells [Internet]. Journal of Solid State Electrochemistry. 2016 ; 20( 8): 2127-2133.[citado 2024 maio 15 ] Available from: https://doi.org/10.1007/s10008-016-3219-2

    • Vancouver

      Gozzi G, Cagnani LD, Faria RM, Santos LF. Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells [Internet]. Journal of Solid State Electrochemistry. 2016 ; 20( 8): 2127-2133.[citado 2024 maio 15 ] Available from: https://doi.org/10.1007/s10008-016-3219-2

  • Artigo de periodico

    Probing semiconductor confined excitons decay into surface plasmon polaritons (2016)

    Sobreira, F. W. A.; Oliveira, E. R. Cardozo de; Teodoro, M. D.; Marques, G. E.; Marega Junior, Euclydes

    Source: Applied Physics A. Unidade: IFSC

    Subjects: FOTÔNICA, SEMICONDUTORES, NANOPARTÍCULAS, POÇOS QUÂNTICOS

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      SOBREIRA, F. W. A. et al. Probing semiconductor confined excitons decay into surface plasmon polaritons. Applied Physics A, v. 122, n. 4, p. 385-1-385-6, 2016Tradução . . Disponível em: https://doi.org/10.1007/s00339-016-9831-2. Acesso em: 15 maio 2024.

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      Sobreira, F. W. A., Oliveira, E. R. C. de, Teodoro, M. D., Marques, G. E., & Marega Junior, E. (2016). Probing semiconductor confined excitons decay into surface plasmon polaritons. Applied Physics A, 122( 4), 385-1-385-6. doi:10.1007/s00339-016-9831-2

    • NLM

      Sobreira FWA, Oliveira ERC de, Teodoro MD, Marques GE, Marega Junior E. Probing semiconductor confined excitons decay into surface plasmon polaritons [Internet]. Applied Physics A. 2016 ; 122( 4): 385-1-385-6.[citado 2024 maio 15 ] Available from: https://doi.org/10.1007/s00339-016-9831-2

    • Vancouver

      Sobreira FWA, Oliveira ERC de, Teodoro MD, Marques GE, Marega Junior E. Probing semiconductor confined excitons decay into surface plasmon polaritons [Internet]. Applied Physics A. 2016 ; 122( 4): 385-1-385-6.[citado 2024 maio 15 ] Available from: https://doi.org/10.1007/s00339-016-9831-2

  • Artigo de periodico

    Laser induced periodic surface structuring on Si by temporal shaped femtosecond pulses (2015)

    Almeida, G. F. B.; Martins, R. J.; Otuka, A. J. G.; Siqueira, J. P.; Mendonça, Cleber Renato

    Source: Optics Express. Unidade: IFSC

    Subjects: ESTRUTURA DE SUPERFÍCIE, LASER, SEMICONDUTORES, FOTÔNICA

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      ALMEIDA, G. F. B. et al. Laser induced periodic surface structuring on Si by temporal shaped femtosecond pulses. Optics Express, v. 23, n. 21, p. 27597-27605, 2015Tradução . . Disponível em: https://doi.org/10.1364/OE.23.027597. Acesso em: 15 maio 2024.

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      Almeida, G. F. B., Martins, R. J., Otuka, A. J. G., Siqueira, J. P., & Mendonça, C. R. (2015). Laser induced periodic surface structuring on Si by temporal shaped femtosecond pulses. Optics Express, 23( 21), 27597-27605. doi:10.1364/OE.23.027597

    • NLM

      Almeida GFB, Martins RJ, Otuka AJG, Siqueira JP, Mendonça CR. Laser induced periodic surface structuring on Si by temporal shaped femtosecond pulses [Internet]. Optics Express. 2015 ; 23( 21): 27597-27605.[citado 2024 maio 15 ] Available from: https://doi.org/10.1364/OE.23.027597

    • Vancouver

      Almeida GFB, Martins RJ, Otuka AJG, Siqueira JP, Mendonça CR. Laser induced periodic surface structuring on Si by temporal shaped femtosecond pulses [Internet]. Optics Express. 2015 ; 23( 21): 27597-27605.[citado 2024 maio 15 ] Available from: https://doi.org/10.1364/OE.23.027597

  • Artigo de periodico

    Antiferromagnetic resonance of polycrystalline BiMn2O5 (2015)

    Santana, V. T.; Walmsley, L.; Fier, I.; Eichel, R.-A.; Jakes, P.; Chumak, I.; Ozarowski, A.; Tol, Johan van; Nascimento, Otaciro Rangel

    Source: Solid State Communications. Unidade: IFSC

    Subjects: POLÍMEROS (MATERIAIS), FERROMAGNETISMO, SEMICONDUTORES

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      SANTANA, V. T. et al. Antiferromagnetic resonance of polycrystalline BiMn2O5. Solid State Communications, v. 207, p. 40-43, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2015.02.007. Acesso em: 15 maio 2024.

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      Santana, V. T., Walmsley, L., Fier, I., Eichel, R. -A., Jakes, P., Chumak, I., et al. (2015). Antiferromagnetic resonance of polycrystalline BiMn2O5. Solid State Communications, 207, 40-43. doi:10.1016/j.ssc.2015.02.007

    • NLM

      Santana VT, Walmsley L, Fier I, Eichel R-A, Jakes P, Chumak I, Ozarowski A, Tol J van, Nascimento OR. Antiferromagnetic resonance of polycrystalline BiMn2O5 [Internet]. Solid State Communications. 2015 ; 207 40-43.[citado 2024 maio 15 ] Available from: https://doi.org/10.1016/j.ssc.2015.02.007

    • Vancouver

      Santana VT, Walmsley L, Fier I, Eichel R-A, Jakes P, Chumak I, Ozarowski A, Tol J van, Nascimento OR. Antiferromagnetic resonance of polycrystalline BiMn2O5 [Internet]. Solid State Communications. 2015 ; 207 40-43.[citado 2024 maio 15 ] Available from: https://doi.org/10.1016/j.ssc.2015.02.007

  • Artigo de periodico

    Spin-orbit interaction in GaAs wells: from one to two subbands (2015)

    Fu, Jiyong; Egues, José Carlos

    Source: Physical Review B. Unidade: IFSC

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA TEÓRICA

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      FU, Jiyong e EGUES, José Carlos. Spin-orbit interaction in GaAs wells: from one to two subbands. Physical Review B, v. 91, n. 7, p. 075408-1-075408-7, 2015Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.91.075408. Acesso em: 15 maio 2024.

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      Fu, J., & Egues, J. C. (2015). Spin-orbit interaction in GaAs wells: from one to two subbands. Physical Review B, 91( 7), 075408-1-075408-7. doi:10.1103/PhysRevB.91.075408

    • NLM

      Fu J, Egues JC. Spin-orbit interaction in GaAs wells: from one to two subbands [Internet]. Physical Review B. 2015 ; 91( 7): 075408-1-075408-7.[citado 2024 maio 15 ] Available from: https://doi.org/10.1103/PhysRevB.91.075408

    • Vancouver

      Fu J, Egues JC. Spin-orbit interaction in GaAs wells: from one to two subbands [Internet]. Physical Review B. 2015 ; 91( 7): 075408-1-075408-7.[citado 2024 maio 15 ] Available from: https://doi.org/10.1103/PhysRevB.91.075408

  • Artigo de periodico

    Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions (2015)

    Gozzi, Giovani; Queiroz, Edivaldo Leal; Zucolotto, Valtencir; Faria, Roberto Mendonça; Chinaglia, Dante Luis

    Source: Physica Status Solidi B. Unidade: IFSC

    Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS), NANOTECNOLOGIA

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      GOZZI, Giovani et al. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions. Physica Status Solidi B, v. 252, n. 2, p. 404-410, 2015Tradução . . Disponível em: https://doi.org/10.1002/pssb.201451556. Acesso em: 15 maio 2024.

    • APA

      Gozzi, G., Queiroz, E. L., Zucolotto, V., Faria, R. M., & Chinaglia, D. L. (2015). Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions. Physica Status Solidi B, 252( 2), 404-410. doi:10.1002/pssb.201451556

    • NLM

      Gozzi G, Queiroz EL, Zucolotto V, Faria RM, Chinaglia DL. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions [Internet]. Physica Status Solidi B. 2015 ; 252( 2): 404-410.[citado 2024 maio 15 ] Available from: https://doi.org/10.1002/pssb.201451556

    • Vancouver

      Gozzi G, Queiroz EL, Zucolotto V, Faria RM, Chinaglia DL. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions [Internet]. Physica Status Solidi B. 2015 ; 252( 2): 404-410.[citado 2024 maio 15 ] Available from: https://doi.org/10.1002/pssb.201451556

  • Artigo de periodico

    Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide (2015)

    Almeida, Juliana M. P.; Lu, Chao; Mendonça, Cleber Renato; Arnold, Craig B.

    Source: Optical Materials Express. Unidade: IFSC

    Subjects: FILMES FINOS, NANOPARTÍCULAS, SEMICONDUTORES

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      ALMEIDA, Juliana M. P. et al. Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide. Optical Materials Express, v. 5, n. 8, p. 1815-1821, 2015Tradução . . Disponível em: https://doi.org/10.1364/OME.5.001815. Acesso em: 15 maio 2024.

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      Almeida, J. M. P., Lu, C., Mendonça, C. R., & Arnold, C. B. (2015). Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide. Optical Materials Express, 5( 8), 1815-1821. doi:10.1364/OME.5.001815

    • NLM

      Almeida JMP, Lu C, Mendonça CR, Arnold CB. Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide [Internet]. Optical Materials Express. 2015 ; 5( 8): 1815-1821.[citado 2024 maio 15 ] Available from: https://doi.org/10.1364/OME.5.001815

    • Vancouver

      Almeida JMP, Lu C, Mendonça CR, Arnold CB. Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide [Internet]. Optical Materials Express. 2015 ; 5( 8): 1815-1821.[citado 2024 maio 15 ] Available from: https://doi.org/10.1364/OME.5.001815

  • Artigo de periodico

    Dynamics of energy level alignment at ITO/organic semiconductor interfaces (2015)

    Coutinho, Douglas J.; Faria, Gregório Couto; Faria, Roberto Mendonça; Seggern, Heinz von

    Source: Organic Electronics. Unidade: IFSC

    Subjects: SEMICONDUTORES, FILMES FINOS, POLÍMEROS (MATERIAIS)

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      COUTINHO, Douglas J. et al. Dynamics of energy level alignment at ITO/organic semiconductor interfaces. Organic Electronics, v. No 2015, p. 408-414, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.orgel.2015.08.012. Acesso em: 15 maio 2024.

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      Coutinho, D. J., Faria, G. C., Faria, R. M., & Seggern, H. von. (2015). Dynamics of energy level alignment at ITO/organic semiconductor interfaces. Organic Electronics, No 2015, 408-414. doi:10.1016/j.orgel.2015.08.012

    • NLM

      Coutinho DJ, Faria GC, Faria RM, Seggern H von. Dynamics of energy level alignment at ITO/organic semiconductor interfaces [Internet]. Organic Electronics. 2015 ; No 2015 408-414.[citado 2024 maio 15 ] Available from: https://doi.org/10.1016/j.orgel.2015.08.012

    • Vancouver

      Coutinho DJ, Faria GC, Faria RM, Seggern H von. Dynamics of energy level alignment at ITO/organic semiconductor interfaces [Internet]. Organic Electronics. 2015 ; No 2015 408-414.[citado 2024 maio 15 ] Available from: https://doi.org/10.1016/j.orgel.2015.08.012

  • Artigo de periodico

    All-electron topological insulator in InAs double wells (2015)

    Erlingsson, Sigurdur I.; Egues, José Carlos

    Source: Physical Review B. Unidade: IFSC

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA TEÓRICA

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      ERLINGSSON, Sigurdur I. e EGUES, José Carlos. All-electron topological insulator in InAs double wells. Physical Review B, v. 91, n. Ja 2015, p. 035312-1-035312-8, 2015Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.91.035312. Acesso em: 15 maio 2024.

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      Erlingsson, S. I., & Egues, J. C. (2015). All-electron topological insulator in InAs double wells. Physical Review B, 91( Ja 2015), 035312-1-035312-8. doi:10.1103/PhysRevB.91.035312

    • NLM

      Erlingsson SI, Egues JC. All-electron topological insulator in InAs double wells [Internet]. Physical Review B. 2015 ; 91( Ja 2015): 035312-1-035312-8.[citado 2024 maio 15 ] Available from: https://doi.org/10.1103/PhysRevB.91.035312

    • Vancouver

      Erlingsson SI, Egues JC. All-electron topological insulator in InAs double wells [Internet]. Physical Review B. 2015 ; 91( Ja 2015): 035312-1-035312-8.[citado 2024 maio 15 ] Available from: https://doi.org/10.1103/PhysRevB.91.035312

  • Artigo de periodico

    The role of oxygen vacancies and their location in the magnetic properties of Ce1-xCuxO2-δ nanorods (2015)

    Bernardi, Maria Inês Basso; Mesquita, A.; Béron, F.; Pirota, K. R.; Zevallos, A. O.; Doriguetto, A. C.; Carvalho, H. B.

    Source: Physical Chemistry Chemical Physics. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, OXIGÊNIO, MAGNETISMO (PROPRIEDADES), SEMICONDUTORES

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      BERNARDI, Maria Inês Basso et al. The role of oxygen vacancies and their location in the magnetic properties of Ce1-xCuxO2-δ nanorods. Physical Chemistry Chemical Physics, v. 17, n. 5, p. 3072-3080, 2015Tradução . . Disponível em: https://doi.org/10.1039/c4cp04879b. Acesso em: 15 maio 2024.

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      Bernardi, M. I. B., Mesquita, A., Béron, F., Pirota, K. R., Zevallos, A. O., Doriguetto, A. C., & Carvalho, H. B. (2015). The role of oxygen vacancies and their location in the magnetic properties of Ce1-xCuxO2-δ nanorods. Physical Chemistry Chemical Physics, 17( 5), 3072-3080. doi:10.1039/c4cp04879b

    • NLM

      Bernardi MIB, Mesquita A, Béron F, Pirota KR, Zevallos AO, Doriguetto AC, Carvalho HB. The role of oxygen vacancies and their location in the magnetic properties of Ce1-xCuxO2-δ nanorods [Internet]. Physical Chemistry Chemical Physics. 2015 ; 17( 5): 3072-3080.[citado 2024 maio 15 ] Available from: https://doi.org/10.1039/c4cp04879b

    • Vancouver

      Bernardi MIB, Mesquita A, Béron F, Pirota KR, Zevallos AO, Doriguetto AC, Carvalho HB. The role of oxygen vacancies and their location in the magnetic properties of Ce1-xCuxO2-δ nanorods [Internet]. Physical Chemistry Chemical Physics. 2015 ; 17( 5): 3072-3080.[citado 2024 maio 15 ] Available from: https://doi.org/10.1039/c4cp04879b

  • Artigo de periodico

    Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure (2014)

    Barbosa, B. G.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, NANOTECNOLOGIA

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      BARBOSA, B. G. et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, v. 115, p. 114312-1-114312-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4869218. Acesso em: 15 maio 2024.

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      Barbosa, B. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, 115, 114312-1-114312-5. doi:10.1063/1.4869218

    • NLM

      Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4869218

    • Vancouver

      Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4869218

  • Artigo de periodico

    Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene (2014)

    Shakouri, Kh.; Vasilopoulos, P.; Vargiamidis, V.; Hai, Guo-Qiang; Peeters, F. M.

    Source: Applied Physics Letters. Unidade: IFSC

    Subjects: SPINTRÔNICA, POÇOS QUÂNTICOS, SEMICONDUTORES

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      SHAKOURI, Kh. et al. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, v. 104, n. 21, p. 213109-1-213109-4, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4878509. Acesso em: 15 maio 2024.

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      Shakouri, K., Vasilopoulos, P., Vargiamidis, V., Hai, G. -Q., & Peeters, F. M. (2014). Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, 104( 21), 213109-1-213109-4. doi:10.1063/1.4878509

    • NLM

      Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4878509

    • Vancouver

      Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4878509

  • Artigo de periodico

    Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)

    Zanatta, Antonio Ricardo; Ingram, D. C.; Kordesch, M. E.

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)

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      ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 15 maio 2024.

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      Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589

    • NLM

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4896589

    • Vancouver

      Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4896589

  • Artigo de periodico

    A new tetracyclic lactam building block for thick, broad-bandgap photovoltaics (2014)

    Kroon, Renee; Mendaza, Amaia Diaz de Zerio; Himmelberger, Scott; Bergqvist, Jonas; Bäcke, Olof; Faria, Gregório Couto; Gao, Feng; Obaid, Abdulmalik; Zhuang, Wenliu; Gedefaw, Desta; Olsson, Eva; Inganäs, Olle; Salleo, Alberto; Müller, Christian; Andersson, Mats R.

    Source: Journal of the American Chemical Society. Unidade: IFSC

    Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS), CÉLULAS SOLARES

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      KROON, Renee et al. A new tetracyclic lactam building block for thick, broad-bandgap photovoltaics. Journal of the American Chemical Society, v. 136, n. 33, p. 11578-11581, 2014Tradução . . Disponível em: https://doi.org/10.1021/ja5051692. Acesso em: 15 maio 2024.

    • APA

      Kroon, R., Mendaza, A. D. de Z., Himmelberger, S., Bergqvist, J., Bäcke, O., Faria, G. C., et al. (2014). A new tetracyclic lactam building block for thick, broad-bandgap photovoltaics. Journal of the American Chemical Society, 136( 33), 11578-11581. doi:10.1021/ja5051692

    • NLM

      Kroon R, Mendaza AD de Z, Himmelberger S, Bergqvist J, Bäcke O, Faria GC, Gao F, Obaid A, Zhuang W, Gedefaw D, Olsson E, Inganäs O, Salleo A, Müller C, Andersson MR. A new tetracyclic lactam building block for thick, broad-bandgap photovoltaics [Internet]. Journal of the American Chemical Society. 2014 ; 136( 33): 11578-11581.[citado 2024 maio 15 ] Available from: https://doi.org/10.1021/ja5051692

    • Vancouver

      Kroon R, Mendaza AD de Z, Himmelberger S, Bergqvist J, Bäcke O, Faria GC, Gao F, Obaid A, Zhuang W, Gedefaw D, Olsson E, Inganäs O, Salleo A, Müller C, Andersson MR. A new tetracyclic lactam building block for thick, broad-bandgap photovoltaics [Internet]. Journal of the American Chemical Society. 2014 ; 136( 33): 11578-11581.[citado 2024 maio 15 ] Available from: https://doi.org/10.1021/ja5051692

  • Artigo de periodico

    Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe (2014)

    Ma, Jie; Yang, Jihui; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da

    Source: Physical Review B. Unidade: IQSC

    Assunto: SEMICONDUTORES

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    • ABNT

      MA, Jie et al. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe. Physical Review B, v. 90, n. 15, p. 155208-1-7, 2014Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.90.155208. Acesso em: 15 maio 2024.

    • APA

      Ma, J., Yang, J., Wei, S. -H., & Silva, J. L. F. da. (2014). Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe. Physical Review B, 90( 15), 155208-1-7. doi:10.1103/PhysRevB.90.155208

    • NLM

      Ma J, Yang J, Wei S-H, Silva JLF da. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe [Internet]. Physical Review B. 2014 ; 90( 15): 155208-1-7.[citado 2024 maio 15 ] Available from: https://doi.org/10.1103/PhysRevB.90.155208

    • Vancouver

      Ma J, Yang J, Wei S-H, Silva JLF da. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe [Internet]. Physical Review B. 2014 ; 90( 15): 155208-1-7.[citado 2024 maio 15 ] Available from: https://doi.org/10.1103/PhysRevB.90.155208

  • Artigo de periodico

    Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection (2014)

    Guerreiro, Haroldo A.; Strixino, Francisco Trivinho; Chiquito, Adenilson J.; Guimarães, Francisco Eduardo Gontijo; Pereira, Ernesto C.

    Source: Journal of Nanoscience and Nanotechnology. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES, FILMES FINOS

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      GUERREIRO, Haroldo A. et al. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection. Journal of Nanoscience and Nanotechnology, v. 14, n. 9, p. 6653-6657, 2014Tradução . . Disponível em: https://doi.org/10.1166/jnn.2014.9375. Acesso em: 15 maio 2024.

    • APA

      Guerreiro, H. A., Strixino, F. T., Chiquito, A. J., Guimarães, F. E. G., & Pereira, E. C. (2014). Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection. Journal of Nanoscience and Nanotechnology, 14( 9), 6653-6657. doi:10.1166/jnn.2014.9375

    • NLM

      Guerreiro HA, Strixino FT, Chiquito AJ, Guimarães FEG, Pereira EC. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6653-6657.[citado 2024 maio 15 ] Available from: https://doi.org/10.1166/jnn.2014.9375

    • Vancouver

      Guerreiro HA, Strixino FT, Chiquito AJ, Guimarães FEG, Pereira EC. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6653-6657.[citado 2024 maio 15 ] Available from: https://doi.org/10.1166/jnn.2014.9375

  • Artigo de periodico

    Avoiding bias effects in NMR experiments for heteronuclear dipole-dipole coupling determinations: principles and application to organic semiconductor materials (2013)

    Kurz, Ricardo; Cobo, Marcio Fernando; Azevêdo, Eduardo Ribeiro de; Sommer, Michael Sommer; Wicklein, André; Thelakkat, Mukundan; Hempel, Günter; Saalwächter, Kay

    Source: ChemPhysChem. Unidade: IFSC

    Subjects: RESSONÂNCIA MAGNÉTICA NUCLEAR, SEMICONDUTORES

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      KURZ, Ricardo et al. Avoiding bias effects in NMR experiments for heteronuclear dipole-dipole coupling determinations: principles and application to organic semiconductor materials. ChemPhysChem, v. 14, n. 13, p. 3146-3155, 2013Tradução . . Disponível em: https://doi.org/10.1002/cphc.201300255. Acesso em: 15 maio 2024.

    • APA

      Kurz, R., Cobo, M. F., Azevêdo, E. R. de, Sommer, M. S., Wicklein, A., Thelakkat, M., et al. (2013). Avoiding bias effects in NMR experiments for heteronuclear dipole-dipole coupling determinations: principles and application to organic semiconductor materials. ChemPhysChem, 14( 13), 3146-3155. doi:10.1002/cphc.201300255

    • NLM

      Kurz R, Cobo MF, Azevêdo ER de, Sommer MS, Wicklein A, Thelakkat M, Hempel G, Saalwächter K. Avoiding bias effects in NMR experiments for heteronuclear dipole-dipole coupling determinations: principles and application to organic semiconductor materials [Internet]. ChemPhysChem. 2013 ; 14( 13): 3146-3155.[citado 2024 maio 15 ] Available from: https://doi.org/10.1002/cphc.201300255

    • Vancouver

      Kurz R, Cobo MF, Azevêdo ER de, Sommer MS, Wicklein A, Thelakkat M, Hempel G, Saalwächter K. Avoiding bias effects in NMR experiments for heteronuclear dipole-dipole coupling determinations: principles and application to organic semiconductor materials [Internet]. ChemPhysChem. 2013 ; 14( 13): 3146-3155.[citado 2024 maio 15 ] Available from: https://doi.org/10.1002/cphc.201300255

  • Artigo de periodico

    Effect of partial screening upon the conductance through nanostructured devices (2013)

    Oliveira, Luiz Nunes de

    Source: Journal of Superconductivity and Novel Magnetism. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, SEMICONDUTORES, EFEITO KONDO

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      OLIVEIRA, Luiz Nunes de. Effect of partial screening upon the conductance through nanostructured devices. Journal of Superconductivity and Novel Magnetism, v. 26, n. 6, p. 2189-2192, 2013Tradução . . Disponível em: https://doi.org/10.1007/s10948-012-1478-4. Acesso em: 15 maio 2024.

    • APA

      Oliveira, L. N. de. (2013). Effect of partial screening upon the conductance through nanostructured devices. Journal of Superconductivity and Novel Magnetism, 26( 6), 2189-2192. doi:10.1007/s10948-012-1478-4

    • NLM

      Oliveira LN de. Effect of partial screening upon the conductance through nanostructured devices [Internet]. Journal of Superconductivity and Novel Magnetism. 2013 ; 26( 6): 2189-2192.[citado 2024 maio 15 ] Available from: https://doi.org/10.1007/s10948-012-1478-4

    • Vancouver

      Oliveira LN de. Effect of partial screening upon the conductance through nanostructured devices [Internet]. Journal of Superconductivity and Novel Magnetism. 2013 ; 26( 6): 2189-2192.[citado 2024 maio 15 ] Available from: https://doi.org/10.1007/s10948-012-1478-4

  • Artigo de periodico

    Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)

    Guimarães, Francisco Eduardo Gontijo; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A.

    Source: Applied Physics Letters. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, SEMICONDUTORES

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      GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 15 maio 2024.

    • APA

      Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288

    • NLM

      Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4816288

    • Vancouver

      Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 maio 15 ] Available from: https://doi.org/10.1063/1.4816288

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